APT10M09B2VFR suppliers, APT10M09B2VFR price trend, APT10M09B2VFR PDF download, circuit diagram from SeekIC

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MFG:APT Package Cooled:T-MAX?[B2] D/C:`06+(pb-free)

Five Points

MFG: APT

Package Cooled: T-MAX?[B2]

D/C: `06+(pb-free)

Symbol	Parameter	APT10M09B2VFR	UNIT
V_DSS	Drain-Source Voltage	100	Volts
I_D	Continuous Drain Current @ T_c = 25 °C	100	Amps
I_DM	Pulsed Drain Current	400	Amps
V_GS	Gate-Source Voltage Continuous	±30	Volts
V_GSM	Gate-Source Voltage Transient	±40	Volts
P_D	Total Power Dissipation @ T_C = 25	625	Watts
P_D	Linear Derati	9.0	W/°C
T_J,T_STG	Operating and Storage Junction Temperature Range	-55to 150	°C
T_L	Lead Temperature: 0.063" from Case for 10 Sec.	300	°C
I_AR	Avalanche Current (Repetitive and Non-Repetitive)	100	Amps
E_AR	Repetitive Avalanche Energy	50	mJ
E_AS	Single Pulse Avalanche Energy	3000	mJ

• Identical Specifications: T-MAX™ or TO-264 Package

• Lower Leakage

• Faster Switching

• Fast Recovery Body Diode

• 100% Avalanche Tested

APT10M09B2VFR
PDF/DataSheet Download

·APT1001
ADPOW [Advanced Power Technology]
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
36626 KB
·APT1001R1AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
214276 KB
·APT1001R1AVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
69982 KB
·APT1001R1BN
ADPOW [Advanced Power Technology]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
53353 KB
·APT1001R1BVFR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
72323 KB
·APT1001R1DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
395046 KB
·APT1001R1HN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
227320 KB
·APT1001R1HVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
68546 KB

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