Purchase APT10M09LVR, In-stock APT10M09LVR From SeekIC.
MFG:APT D/C:`06+(pb-free)
- Table of contents:
APT10M09LVR
-
Suppliers
DataSheet
General Description
APT10M09LVR Maximum Ratings
| Symbol | Parameter | APT10M09LVR | UNIT |
| VDSS | Drain-Source Voltage | 100 | Volts |
| ID | Continuous Drain Current @ Tc = 25 °C |
100 | Amps |
| IDM | Pulsed Drain Current |
400 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25 | 625 | Watts |
| Linear Derati | 9.0 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) |
100 | Amps |
| EAR | Repetitive Avalanche Energy | 50 | mJ |
| EAS | Single Pulse Avalanche Energy | 3000 |
APT10M09LVR Features
• Identical Specifications: T-MAX™ or TO-264 Package
• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
APT10M09LVR
PDF/DataSheet Download
- Datasheet: APT10M09LVR
- File Size: 40860 KB
- Manufacturer: ADPOW [Advanced Power Technology]
- Click here to Download
- ·APT1001
- ADPOW [Advanced Power Technology]
- Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
- 36626 KB
- ·APT1001R1AN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
- 214276 KB
- ·APT1001R1AVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
- 69982 KB
- ·APT1001R1BN
- ADPOW [Advanced Power Technology]
- N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
- 53353 KB
- ·APT1001R1BVFR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 72323 KB
- ·APT1001R1DN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
- 395046 KB
- ·APT1001R1HN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
- 227320 KB
- ·APT1001R1HVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 68546 KB
APT10M09LVR Relative Products
APT10M09LVFR
APT10M09B2VR
APT10M09B2VFR
APT10M07JVR
APT102GA60L
IGBT PT 600V 183A TO-264
APT100S20LCTG
DIODE SCHOTTKY 200V TO264
Hotspot Suppliers Product
UF2840G
Price: 1-10 USD
40W, 100-500 MHz, 28V, RF Power MOSFET Transistor, 4A, Lower noise figure, Lower capacitances
QG82945GMS
Price: 7.9-11.9 USD
QG82945GMS, Intel Corporation, BGA, Integrated Circuits
CY7C68013A-100AXC
Price: 1-2 USD
SOP, microcontroller, high speed, usb peripheral controller, 300 mW, 5.25V, 16 KBytes
A22S-3M-20
Price: 25-48 USD
Rotary Switch, 3 Position, DPST-NO, Panel Mount, Screw Terminal, 22mm, 10A
PIC18F4320-I/PT
Price: 1.23-1.28 USD
40-Pin, Enhanced Flash Microcontroller, PDIP, with 10-Bit A/D and nano Watt Technology
HCPL-3120-500E
Price: 0.98-1.6 USD
gate drive optocoupler, SOP8, 25mA
MC14020BDR2G
Price: 0.1-1 USD
14Bit Binary Counter, SOP-16, Fully Static Operation, -0.5 to +18.0 V, 500 mW Power Dissipation
74AC139
Price: 0.167-0.25 USD
high-speed, dual 1-of-4 decoder/demultiplexer, SOP, -0.5V to +7.0V, 20 mA, Multifunction capability
2SK60
Price: 12-12.5 USD
Silicon N-Channel MOS FET, TO-3, ±1A, 20V, Low ON-resistance, High-speed switching
XC4VLX100-11FF1148C
Price: 200-350 USD
XC4VLX100-11FF1148C Xilinx, Inc. FPGA BGA
MCIMX31DVMN5D
Price: 18-23 USD
473MAPBGA, processor, 532MHz, 1.22 V to 3.3 V, MCIMX31DVMN5D
LA6339
Price: 1-2 USD
high-performance quad comparator, 14PIN DIP, 36V, 700mW, small current dissipation
