APT14F100B

MOSFET N-CH 1000V 14A TO-247

product image

APT14F100B Picture
SeekIC No. : 003431402 Detail

APT14F100B: MOSFET N-CH 1000V 14A TO-247

floor Price/Ceiling Price

US $ 5.44~5.44 / Piece | Get Latest Price
Part Number:
APT14F100B
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~30
  • Unit Price
  • $5.44
  • Processing time
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: POWER MOS 8™ Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV)
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 14A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 980 mOhm @ 7A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) @ Vgs: 120nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3965pF @ 25V
Power - Max: 500W Mounting Type: Through Hole
Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 14A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-247-3
Gate Charge (Qg) @ Vgs: 120nC @ 10V
Drain to Source Voltage (Vdss): 1000V (1kV)
Power - Max: 500W
Vgs(th) (Max) @ Id: 5V @ 1mA
Manufacturer: Microsemi Power Products Group
Series: POWER MOS 8™
Supplier Device Package: TO-247 [B]
Input Capacitance (Ciss) @ Vds: 3965pF @ 25V
Rds On (Max) @ Id, Vgs: 980 mOhm @ 7A, 10V


Parameters:

Technical/Catalog InformationAPT14F100B
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs-
Input Capacitance (Ciss) @ Vds 3965pF @ 25V
Power - Max500W
PackagingTube
Gate Charge (Qg) @ Vgs120nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT14F100B
APT14F100B



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Optoelectronics
Crystals and Oscillators
Connectors, Interconnects
View more