APT150GN120J

Configuration: Single
Input: Standard
NTC Thermistor: No
Mounting Type: Chassis Mount
Voltage - Collector Emitter Breakdown (Max): 1200V
Series: -
Manufacturer: Microsemi Power Products Group
IGBT Type: Trench and Field Stop
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
Current - Collector (Ic) (Max): 215A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 9.5nF @ 25V
Power - Max: 625W
Package / Case: ISOTOP
Supplier Device Package: ISOTOP?


Features:

• 1200V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability


Application

Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage	1200	Volts
VGE	Gate-Emitter Voltage	± 30	Volts
IC	Continuous Collector Current @ TC = 25°C	215	Amps
IC	Continuous Collector Current @ TC = 110°C	99	Amps
ICM	Pulsed Collector Current 1	450	Amps
SSOA	Switching Safe Operating Area @ TJ = 150°C	150A @ 1200V
PD	Total Power Dissipation	625	Watts
TL	Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.	300	°C
Tj Tstg	Operating and Storage Junction Temperature Range	-55 to 150	°C

Description

Utilizing the latest Field Stop and Trench Gate technologies APT150GN120J  , these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.

Parameters:

Technical/Catalog Information	APT150GN120J
Vendor	Microsemi-PPG
Category	Undefined Category
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT150GN120J APT150GN120J APT150GN120JMI ND APT150GN120JMIND APT150GN120JMI