MOSFET N-CH 600V 18A TO-247
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Features: SpecificationsDescription APT1001R1AN is a kind of N-channel enhancement mode high volt...
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Specifications Symbol Parameter APT1001R1BN APT1001R3BN UNIT VDSS Drain-Source Voltag...
| Series: | - | Manufacturer: | Microsemi Power Products Group | ||
| FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
| Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
| FET Feature: | Standard | Drain to Source Voltage (Vdss): | 600V | ||
| Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 19A | ||
| Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
| Rds On (Max) @ Id, Vgs: | 390 mOhm @ 9A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
| Vgs(th) (Max) @ Id: | 5V @ 1mA | Gate Charge (Qg) @ Vgs: | 90nC @ 10V | ||
| Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 3550pF @ 25V | ||
| Power - Max: | 335W | Mounting Type: | Through Hole | ||
| Package / Case: | TO-247-3 | Supplier Device Package: | TO-247 [B] |
| Technical/Catalog Information | APT18F60B |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 18A |
| Rds On (Max) @ Id, Vgs | 390 mOhm @ 9A, 10V |
| Input Capacitance (Ciss) @ Vds | 3550pF @ 25V |
| Power - Max | 335W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 90nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT18F60B APT18F60B APT18F60BMI ND APT18F60BMIND APT18F60BMI |