MOSFET N-CH 1000V 20A SOT-227
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Features: SpecificationsDescription APT1001R1AN is a kind of N-channel enhancement mode high volt...
Features: Faster Switching 100% Avalanche Tested Lower Leakage PopularTO-3 PackageSpecificat...
Specifications Symbol Parameter APT1001R1BN APT1001R3BN UNIT VDSS Drain-Source Voltag...
| Series: | POWER MOS 8™ | Manufacturer: | Microsemi Power Products Group |
| FET Type: | MOSFET N-Channel, Metal Oxide | FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 1000V (1kV) | Current - Continuous Drain (Id) @ 25° C: | 20A |
| Rds On (Max) @ Id, Vgs: | 440 mOhm @ 16A, 10V | Interface Type : | Ethernet, I2C, SPI, UART, USB |
| Vgs(th) (Max) @ Id: | 5V @ 2.5mA | Gate Charge (Qg) @ Vgs: | 260nC @ 10V |
| Input Capacitance (Ciss) @ Vds: | 8500pF @ 25V | Power - Max: | 460W |
| Mounting Type: | Chassis Mount | Package / Case: | SOT-227-4, miniBLOC |
| Supplier Device Package: | ISOTOP? |
| Technical/Catalog Information | APT19F100J |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 19A |
| Rds On (Max) @ Id, Vgs | 460 mOhm @ 16A, 10V |
| Input Capacitance (Ciss) @ Vds | 8500pF @ 25V |
| Power - Max | 460W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 260nC @ 10V |
| Package / Case | SOT-227 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT19F100J APT19F100J |