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MFG:Microsemi-PPG Category:Discrete Semiconductor Products

Five Points

Category: Discrete Semiconductor Products

MFG: Microsemi-PPG

Descriptions: IGBT FAST 1200V 52A TO-247

Price Break

1
25
100
500
1000
5000
10000

Unit Price

9.24000
7.92000
6.27000
5.77500
4.95000
4.45500
4.12500

Extended Price

9.24
198.00
627.00
2887.50
4950.00
22275.00
41250.00

(All prices are in USD) Prices for reference only

IGBT FAST 1200V 52A TO-247

Technical/Catalog Information	APT33GF120BRG
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	52A
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 25A
Power - Max	297W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT33GF120BRG APT33GF120BRG APT33GF120BRGMI ND APT33GF120BRGMIND APT33GF120BRGMI

APT1001
PDF/DataSheet Download

·APT1001R1AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
214276 KB
·APT1001R1AVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
69982 KB
·APT1001R1BN
ADPOW [Advanced Power Technology]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
53353 KB
·APT1001R1BVFR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
72323 KB
·APT1001R1DN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
395046 KB
·APT1001R1HN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
227320 KB
·APT1001R1HVR
ADPOW [Advanced Power Technology]
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
68546 KB
·APT1001R1SN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB
247344 KB

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