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MFG:Microsemi-PPG  Category:Discrete Semiconductor Products  

APT38F80B2

APT Series Datasheet download

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Part Number: APT38F80B2

Category: Discrete Semiconductor Products

MFG: Microsemi-PPG

 

 

Descriptions: MOSFET N-CH 800V 41A T-MAX

Price Break

1
25
100
500
1000
5000
10000

Unit Price

25.73000
22.05600
17.46100
16.08250
13.78500
12.40650
11.48750

Extended Price

25.73
551.40
1746.10
8041.25
13785.00
62032.50
114875.00

(All prices are in USD) Prices for reference only
Urgent Purchase

APT38F80B2 General Description

MOSFET N-CH 800V 41A T-MAX

APT38F80B2 Parameters

Technical/Catalog InformationAPT38F80B2
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C41A
Rds On (Max) @ Id, Vgs280 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 8070pF @ 25V
Power - Max1040W
PackagingTube
Gate Charge (Qg) @ Vgs260nC @ 10V
Package / CaseT-MAX
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT38F80B2
APT38F80B2
APT38F80B2MI ND
APT38F80B2MIND
APT38F80B2MI

APT38F80B2 datasheet

APT1001
PDF/DataSheet Download

Find APT38F80B2 Suppliers

  • ·APT1001R1AN
  •  
  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3  
  • 214276 KB
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  • ·APT1001R1AVR
  • ADPOW [Advanced Power Technology] 
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  • ·APT1001R1BN
  • ADPOW [Advanced Power Technology] 
  • N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 
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  • ·APT1001R1BVFR
  • ADPOW [Advanced Power Technology] 
  • Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 
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  • APT1001R1BVFR Datasheet Download
  • ·APT1001R1DN
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  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP  
  • 395046 KB
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  • ·APT1001R1HN
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  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO  
  • 227320 KB
  • APT1001R1HN Datasheet Download
  • ·APT1001R1HVR
  • ADPOW [Advanced Power Technology] 
  • Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 
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  • ·APT1001R1SN
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  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB  
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