Series: -
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25° C: 44A
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Packaging: Bulk
Power - Max: 450W
Rds On (Max) @ Id, Vgs: 100 mOhm @ 22A, 10V
Gate Charge (Qg) @ Vgs: 312nC @ 10V
Input Capacitance (Ciss) @ Vds: 7410pF @ 25V
Features: • Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular SOT-227 Package
• Single Die MOSFET & FRED
• PFC "Buck" ConfigurationSpecifications
| Symbol |
Parameter |
APT30M40JVR |
UNIT |
| VDSS |
Drain-Source Voltage |
500 |
Volts |
| ID |
Continuous Drain Current @ TC = 25°C |
44 |
Amps |
| IDM |
Pulsed Drain Current |
176 |
| VGS |
Gate-Source Voltage Continuous |
±30 |
Volts |
| VGSM |
Gate-Source Voltage Transient |
±40 |
| PD |
Total Power Dissipation @ TC = 25°C |
450 |
Watts |
| Linear Derating Factor |
3.6 |
W/°C |
| TJ,TSTG |
Operating and Storage Junction Temperature Range |
-55 to 150 |
|
| TL |
Lead Temperature: 0.063" from Case for 10 Sec. |
300 |
| IAR |
Avalanche Current(Repetitive and Non-Repetitive) |
44 |
Amps |
| EAR |
Repetitive Avalanche Energy |
50 |
mJ |
| EAS |
Single Pulse Avalanche Energy |
2500 |
DescriptionPower MOS V® APT5010JVRU3 is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
Parameters: | Technical/Catalog Information | APT5010JVRU3 |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 44A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 22A, 10V |
| Input Capacitance (Ciss) @ Vds | 7410pF @ 25V |
| Power - Max | 450W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 312nC @ 10V |
| Package / Case | SOT-227 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT5010JVRU3
APT5010JVRU3
APT5010JVRU3MI ND
APT5010JVRU3MIND
APT5010JVRU3MI
|
APT5010JVRU3 Data Sheet
