MFG:APT Package Cooled:TO-3P D/C:08+
MFG: APT
Package Cooled: TO-3P
D/C: 08+
Description: Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFE...
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
| Symbol | Parameter |
APT5017BVR |
UNIT |
| VDSS | Drain-Source Voltage |
500 |
Volts |
| ID | Continuous Drain Current @ TC = 25 |
30 |
Amps |
| IDM | Pulsed Drain Current |
120 | |
| VGS | Gate-Source Voltage Continuous |
±30 |
Volts |
| VGSM | Gate-Source Voltage Transient |
±40 | |
| PD | Total Power Dissipation @ TC = 25 |
370 |
Watts |
| Linear Derating Factor |
2.96 |
W/ | |
| TJ,TSTG | Operating and StorageTemperature Range |
-55 to 150 |
|
| TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
| IAR | Avalanche Current(Repetitive and Non-Repetitive) |
30 |
Amps |
| EAR | Repetitive Avalanche Energy |
30 |
mJ |
| EAS | Single Pulse Avalanche Energy |
1300 |
APT5017BVR
PDF/DataSheet Download
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