APT5027BVR

The APT5027BVR is a new generation of high voltage N-channel enhancement mode power MOSFETs.This new technology minimizes the JFET effect,increases packing desnsity and reduces the on-resistance.Power MOS V also achieves faster switching speeds through optimized gate layout.
 
Features of the APT5027BVR are:(1)faster switching;(2)low leakage;(3)100% avalanche tested;(4)popular TO-247 package.

The static electrical characteristics of the APT5027BVR can be summarized as:(1):the symbol is BVDSS,the characteriatic is drain-source breakdown voltage,the Min is 500,the unit is volts;(2):the symbol is ID(on),the characteriatic is on state drain current,the Min is 20,the unit is Amps;(3):the symbol is RDS(on),the characteriatic is drain-source on-state resistance,the Max is 0.27,the unit is Ohms;(4):the symbol is IDSS,the characteriatic is zero gate voltage drain current,the Max is 25,250,the unit is A;(5):the symbol is IGSS,the characteriatic is gate-source leakage current,the Max is ±100,the unit is nA;(6):the symbol is VGS(th),the characteriatic is gate threshold voltage,the Min is 2,the Max is 4,the unit is Volts.