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Part Number: APT50M50JVFR

 

MFG: APT

 

D/C: N/A

Description: Power MOS V® is a new generation of high voltage N-Channel enhancement ode power MOSFET...


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APT50M50JVFR General Description


Power MOS V® is a new generation of high voltage N-Channel enhancement ode power MOSFETs. This new technology minimizes the JFET effect, ncreases packing density and reduces the on-resistance. Power MOS V® lso achieves faster switching speeds through optimized gate layout.

APT50M50JVFR Maximum Ratings

Symbol Parameter APT30M40JVR UNIT
VDSS Drain-Source Voltage 500 Volts
ID Continuous Drain Current @ TC = 25°C 77 Amps
IDM Pulsed Drain Current 308
VGS Gate-Source Voltage Continuous ±30 Volts
VGSM Gate-Source Voltage Transient ±40
PD Total Power Dissipation @ TC = 25°C 700 Watts
Linear Derating Factor 5.6 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR Avalanche Current (Repetitive and Non-Repetitive) 77 Amps
EAR Repetitive Avalanche Energy 50 mJ
EAS Single Pulse Avalanche Energy 3600

APT50M50JVFR Features

• Fast Recovery Body Diode
• 100% Avalanche Tested
• Lower Leakage
• Popular SOT-227 Package
• Faster Switching

APT50M50JVFR datasheet

APT50M50JVFR
PDF/DataSheet Download

  • Datasheet: APT50M50JVFR
  • File Size: 75018 KB
  • Manufacturer: ADPOW [Advanced Power Technology]
  • Click here to Download

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