MFG:APT Package Cooled:264 MAX?[L2] D/C:`06+(pb-free)
MFG: APT
Package Cooled: 264 MAX?[L2]
D/C: `06+(pb-free)
Description: Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode pow...
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
| Symbol | Parameter | APT50M50L2FLL |
UNIT |
| VDSS | Drain-Source Voltage |
500 |
Volts |
| ID | Continuous Drain Current @ TC = 25 |
89 |
Amps |
| IDM | Pulsed Drain Current |
356 | |
| VGS | Gate-Source Voltage Continuous |
±30 |
Volts |
| VGSM | Gate-Source Voltage Transient |
±40 | |
| PD | Total Power Dissipation @ TC = 25 |
890 |
Watts |
| Linear Derating Factor |
7.12 |
W/ | |
| TJ,TSTG | Operating and StorageTemperature Range |
-55 to 150 |
|
| TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
| IAR | Avalanche Current(Repetitive and Non-Repetitive) |
89 |
Amps |
| EAR | Repetitive Avalanche Energy |
50 |
mJ |
| EAS | Single Pulse Avalanche Energy |
3200 |
APT50M50L2FLL
PDF/DataSheet Download
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