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APT50M75B2LLG

MOSFET N-CH 500V 57A T-MAX

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SeekIC No. : 003432620 Detail

APT50M75B2LLG: MOSFET N-CH 500V 57A T-MAX

APT50M75B2LLG Data Sheet

floor Price/Ceiling Price

US $ 7.39~12.32 / Piece | Get Latest Price
Part Number:
APT50M75B2LLG
Mfg:
Supply Ability:
5000

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  • 100~250
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  • Unit Price
  • $12.32
  • $11.4
  • $9.7
  • $8.93
  • $8.47
  • $8.01
  • $7.76
  • $7.55
  • $7.39
  • Processing time
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Product Details

Quick Details

Series: POWER MOS 7® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 500V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 57A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 75 mOhm @ 28.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) @ Vgs: 125nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5590pF @ 25V
Power - Max: 570W Mounting Type: Through Hole
Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX? [B2]    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 125nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 57A
Power - Max: 570W
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX? [B2]
Series: POWER MOS 7®
Rds On (Max) @ Id, Vgs: 75 mOhm @ 28.5A, 10V
Input Capacitance (Ciss) @ Vds: 5590pF @ 25V


Parameters:

Technical/Catalog InformationAPT50M75B2LLG
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C57A
Rds On (Max) @ Id, Vgs75 mOhm @ 28.5A, 10V
Input Capacitance (Ciss) @ Vds 5590pF @ 25V
Power - Max570W
PackagingTube
Gate Charge (Qg) @ Vgs125nC @ 10V
Package / CaseT-MAX
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT50M75B2LLG
APT50M75B2LLG



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