Series: -
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Packaging: Tube
Manufacturer: Microsemi Power Products Group
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25° C: 58A
Gate Charge (Qg) @ Vgs: 570nC @ 10V
Power - Max: 960W
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 110 mOhm @ 43A, 10V
Input Capacitance (Ciss) @ Vds: 17550pF @ 25V
Features: • Fast switching with low EMI/RFI
• Low RDS(on)
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliantApplication• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• InvertersSpecifications
| Symbol |
Parameter |
Ratings |
Unit |
| ID |
Continuous Drain Current @ TC = 25°C |
58 |
A |
| Continuous Drain Current @ TC = 100°C |
36 |
| IDM |
Pulsed Drain Current 1 |
325 |
| VGS |
Gate-Source Voltage |
±30 |
V |
| EAS |
Single Pulse Avalanche Energy 2 |
3725 |
mJ |
| IAR |
Avalanche Current, Repetitive or Non-Repetitive |
43 |
A |
DescriptionPower MOS 8™ APT58M80J is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
Parameters: | Technical/Catalog Information | APT58M80J |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 58A |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 43A, 10V |
| Input Capacitance (Ciss) @ Vds | 17550pF @ 25V |
| Power - Max | 960W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 570nC @ 10V |
| Package / Case | SOT-227 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT58M80J
APT58M80J
APT58M80JMI ND
APT58M80JMIND
APT58M80JMI
|
APT58M80J Data Sheet
