APT6015JVR

FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) @ Vds: 9000pF @ 25V
Drain to Source Voltage (Vdss): 600V
Manufacturer: Microsemi Power Products Group
Supplier Device Package: ISOTOP?
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Series: POWER MOS V®
Power - Max: 450W
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25° C: 35A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 500mA, 10V
Gate Charge (Qg) @ Vgs: 475nC @ 10V


Features:

• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular SOT-227 Package


Specifications

Symbol	Parameter	APT30M85BVR	UNIT
VDSS	Drain-Source Voltage	600	Volts
I D	Continuous Drain Current @ TC = 25°C	35	Amps
I DM	Pulsed Drain Current	140
VGS	Gate-Source Voltage Continuous	±30	Volts
VGSM	Gate-Source Voltage Transient	±40
PD	Total Power Dissipation @ TC = 25°C	450	Watts
	Linear Derating Factor	3.6	W/°C
TJ ,TSTG	Operating and Storage Junction Temperature Range	-55 to 150	°C
TL	Lead Temperature: 0.063" from Case for 10 Sec.	300
I AR	Avalanche Current (Repetitive and Non-Repetitive)	35	Amps
EAR	Repetitive Avalanche Energy	50	mJ
EAS	Single Pulse Avalanche Energy	2500

Parameters:

Technical/Catalog Information	APT6015JVR
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	35A
Rds On (Max) @ Id, Vgs	150 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	9000pF @ 25V
Power - Max	450W
Packaging	Tube
Gate Charge (Qg) @ Vgs	475nC @ 10V
Package / Case	SOT-227
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT6015JVR APT6015JVR