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Part Number: APT8030JVR

 

MFG: APT

 

D/C: N/A

Description: Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new tech...


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APT8030JVR General Description


Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

APT8030JVR Maximum Ratings

Symbol
Parameter
APT8043
UNIT
VDSS
Drain-Source Voltage
800
Volts
ID
 Continuous Drain Current @ TC = 25°C
25
Amps
IDM
Pulsed Drain Current
100
VGS
 Gate-Source Voltage Continuous
±30
Volts
VGSM
 Gate-Source Voltage Transient
±40
PD
 Total Power Dissipation @ TC = 25°C
450
Watts
Linear Derating Factor
3.6
W/°C
TJ,TSTG
 Operating and Storage Junction Temperature Range
-55 to 150
°C
TL
 Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR
 Avalanche Current (Repetitive and Non-Repetitive)
25
Amps
EAR
 Repetitive Avalanche Energy
50
mJ
EAS
Single Pulse Avalanche Energy
2500

APT8030JVR Features

• Faster Switching 
• 100% Avalanche Tested
• Lower Leakage
• Popular SOT-227 Package

APT8030JVR datasheet

APT8030JVR
PDF/DataSheet Download

  • Datasheet: APT8030JVR
  • File Size: 61338 KB
  • Manufacturer: ADPOW [Advanced Power Technology]
  • Click here to Download

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