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MFG:APT Package Cooled:TO-3P D/C:08+
- Table of contents:
APT8043BLL
-
Suppliers
DataSheet
General Description
APT8043BLL Maximum Ratings
|
Symbol |
Parameter |
APT8043 |
UNIT |
|
VDSS |
Drain-Source Voltage |
800
|
Volts |
|
ID |
Continuous Drain Current @ TC = 25°C |
20 |
Amps
|
|
IDM |
Pulsed Drain Current |
80 | |
|
VGS |
Gate-Source Voltage Continuous |
±30 |
Volts |
|
VGSM |
Gate-Source Voltage Transient |
±40 | |
|
PD |
Total Power Dissipation @ TC = 25°C |
400 |
Watts |
| Linear Derating Factor |
3.2 |
W/°C | |
|
TJ,TSTG |
Operating and Storage Junction Temperature Range |
-55 to 150 |
°C |
|
TL |
Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
|
IAR |
Avalanche Current (Repetitive and Non-Repetitive) |
20 |
Amps |
|
EAR |
Repetitive Avalanche Energy |
30 |
mJ |
|
EAS |
Single Pulse Avalanche Energy |
1300 |
APT8043BLL
PDF/DataSheet Download
- Datasheet: APT8043BLL
- File Size: 58086 KB
- Manufacturer: ADPOW [Advanced Power Technology]
- Click here to Download
- ·APT1001
- ADPOW [Advanced Power Technology]
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- ·APT1001R1AN
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- ·APT1001R1AVR
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- ·APT1001R1BN
- ADPOW [Advanced Power Technology]
- N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
- 53353 KB
- ·APT1001R1BVFR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 72323 KB
- ·APT1001R1DN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
- 395046 KB
- ·APT1001R1HN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
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- ·APT1001R1HVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 68546 KB
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