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APT8056BVRG

MOSFET N-CH 800V 16A TO-247

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APT8056BVRG: MOSFET N-CH 800V 16A TO-247

APT8056BVRG Data Sheet

floor Price/Ceiling Price

US $ 8.56~8.56 / Piece | Get Latest Price
Part Number:
APT8056BVRG
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~30
  • Unit Price
  • $8.56
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: POWER MOS V® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 800V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 16A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 560 mOhm @ 500mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: 275nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 4440pF @ 25V
Power - Max: 370W Mounting Type: Through Hole
Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 16A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 800V
Power - Max: 370W
Vgs(th) (Max) @ Id: 4V @ 1mA
Manufacturer: Microsemi Power Products Group
Supplier Device Package: TO-247 [B]
Series: POWER MOS V®
Gate Charge (Qg) @ Vgs: 275nC @ 10V
Input Capacitance (Ciss) @ Vds: 4440pF @ 25V
Rds On (Max) @ Id, Vgs: 560 mOhm @ 500mA, 10V


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