Purchase APT8075BVFR, In-stock APT8075BVFR From SeekIC.
MFG:APT Package Cooled:02+ D/C:247
- Table of contents:
APT8075BVFR
-
Suppliers
DataSheet
General Description
APT8075BVFR Maximum Ratings
| Symbol | Parameter | APT30M70BVFR | UNIT |
| VDSS | Drain-Source Voltage | 800 | Volts |
| ID | Continuous Drain Current @ TC = 25°C | 12 | Amps |
| IDM | Pulsed Drain Current | 48 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25°C | 260 | Watts |
| Linear Derating Factor | 2.08 | W/°C | |
| TJ ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) | 12 | Amps |
| EAR | Repetitive Avalanche Energy | 30 | mJ |
| EAS | Single Pulse Avalanche Energy | 960 |
APT8075BVFR Features
• Fast Recovery Body Diode
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-247 Package
• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-247 Package
• Faster Switching
APT8075BVFR
PDF/DataSheet Download
- Datasheet: APT8075BVFR
- File Size: 74584 KB
- Manufacturer: ADPOW [Advanced Power Technology]
- Click here to Download
- ·APT1001
- ADPOW [Advanced Power Technology]
- Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
- 36626 KB
- ·APT1001R1AN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
- 214276 KB
- ·APT1001R1AVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
- 69982 KB
- ·APT1001R1BN
- ADPOW [Advanced Power Technology]
- N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
- 53353 KB
- ·APT1001R1BVFR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 72323 KB
- ·APT1001R1DN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
- 395046 KB
- ·APT1001R1HN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
- 227320 KB
- ·APT1001R1HVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 68546 KB
APT8075BVFR Relative Products
APT8067HVR
APT8065SVR
APT8065BVFR
APT8065AVR
APT8058HVR
Power MOS V® APT8058HVR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching ...
APT8056BVR
Power MOS V® APT8056BVR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching ...
Hotspot Suppliers Product
SKKD81/12
Price: 23.5-24.5 USD
Rectifier Diode Modules, 20000 A2s, 1.55V, 1.8mΩ, 4.5mA, 95g
MC679P
Price: 8-10 USD
integrated circuit, DIP, 0.5mA
BAR64-05
Price: 0.0001-5 USD
SOT, silicon PIN diode, low signal distortion, 150 V, 100 mA
PIC16C72A-04ISO
Price: 4-6 USD
PIC16C72A-04ISO Microcontrollers (MCU) 3.5KB 128 RAM 22 I/O
PEB20571FV3.1
Price: 6.8-8.5 USD
port interface controller, QFP, -0.3 to 6.0 V
4AK16
Price: 1.5-2 USD
Silicon N-Channel Power MOS FET Array, ZIP-10, Low on-resistance, Low drive current, 4V
MAX3491ESD
Price: 0.65-0.75 USD
3.3V, low-power transceiver, SOP, 727mW, Low-Current Shutdown Mode, 8ns Max Skew
L9113
Price: 3-5 USD
L9113, QFP64, STMicroelectronics
ADG508ATQ
Price: 2.3-2.5 USD
CMOS, 4-/8-Channel, monolithic analog multiplexer, 16-lead DIP/SOIC, 20-lead PLCC/LCC
JANTX1N6041
Price: 12-12.5 USD
1500 WATT, bidiirectional transient voltage suppressor, TO, Working voltage range 5.5V to 185V, Bi...
HE2AN-DC24V
Price: 0.1-100 USD
HE relay, 25A, 24VDC, 1.92 W, 300 Ohms, Excellent resistance, High-capacity, long life, Excellent ...
IR2101
Price: 0.59-0.78 USD
MOSFET, DIP, 600V
