AS29F010

The AS29F010 is a high performance 1 megabit 5 volt-only Flash memory organized as 128K bytes of 8 bits each. AS29F010 is divided into four sectors of 32K bytes each. Each sector is separately erased and programmed without affecting data in the other sectors. All program, erase, and verify operations are 5-volt only, and require no external 12V supply pin. All required features for in-system programmability are provided.

The AS29F010 provides high performance with a maximum access time of 120, or 150 ns. Chip Enable ( CE), Output Enable (OE), and Write Enable (WE) pins allow easy interface with the system bus.

Program, erase, and verify operations of AS29F010 are controlled with an on-chip command register using a JEDEC standard Write State Machine approach to enter commands. Each command requires four write cycles to be executed. Address and data are latched internally during all write, erase, and verify operations, and an internal timer terminates each command. The AS29F010 has a typical timer period of 200 µs for all commands but Erase, which has a typical period of 800 ms. Under nominal conditions, a sector can be completely programmed and ver i fied in less than 12 seconds. To program, erase, and verify a sector typically takes less than 18 seconds.

Data protection of AS29F010 is provided by a low-V_CC lockout and by error checking in the Write State Machine.DATA polling and Toggle Bit modes are used to show that the chip is executing a command when the AS29F010 is read during a write or erase operation. After Erase or P ogram commands, Verify-1 and Verify-0 command modes ensure sufficient margin for reliable operation. (See command summary on page 5.)

The AS29F010 is packaged in 32-pin DIP, PLCC and TSOP packages with JEDEC standard pinouts for one megabit Flash memories.