AS4C256K16E0-30JC

The AS4C256K16E0-30JC is a high performance 4 megabit CMOS dynamic random access memory organized as 262,144 words by 16 bits. The features of the AS4C256K16E0-30JC are: (1)organization: 262,144 wordsx16 bits; (2)high speed; (3)low power consumption; (4)EDO page mode; (5)refresh; (6)read-modify-write; (7)TTL-compatible, three-state I/O; (8)JEDEC standard packages; (9)5V power supply; (10)latch-up current>200mA.

The following is about the absolute maximum ratings of AS4C256K16E0-30JC: (1)input voltage: -1.0V min and 7.0V max; (2)output voltage: -1.0V min and 7.0V max; (3)power supply voltage: -1.0V min and 7.0V max; (4)operating temperature: 0 min and 70 max; (5)storage temperature: -55 min and 150 max; (6)soldering temperaturextime: 260x10 xsec; (7)power dissipation: 1W max; (8)short circuit output current: 50mA; (9)latch-up current: 200mA min.

The electrical characteristics of the AS4C256K16E0-30JC are: (1)output leakage current: -10A min and 10A max at DOUT disabled, 0Vout+5.5V; (2)operating power supply current: 180mA; (3)TTL standby power supply current: 2.0mA max; (4)average power supply current: 200mA; (5)EDO page mode average power supply current: 190mA; (6)CMOS standby power supply current: 1.0mA; (7)output voltage: 2.4V at IOUT=-5.0mA.