AS7C31026B

Features: •Industrial and commercial versions•Organization: 65,536 words * 16 bits•Center power and ground pins for low noise•High speed-10/12/15/20 ns address access time-5, 6, 7, 8 ns output enable access time•Low power consumption: ACTIVE-288 mW / max @ 10 ns•...

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AS7C31026B Picture
SeekIC No. : 004288477 Detail

AS7C31026B: Features: •Industrial and commercial versions•Organization: 65,536 words * 16 bits•Center power and ground pins for low noise•High speed-10/12/15/20 ns address access time-5,...

floor Price/Ceiling Price

Part Number:
AS7C31026B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•Industrial and commercial versions
•Organization: 65,536 words * 16 bits
•Center power and ground pins for low noise
•High speed
-10/12/15/20 ns address access time
-5, 6, 7, 8 ns output enable access time
•Low power consumption: ACTIVE
-288 mW / max @ 10 ns
•Low power consumption: STANDBY
-18 mW / max CMOS I/O
•6 T 0.18 u CMOS technology
•Easy memory expansion with CE</a>, OE</a> inputs
•TTL-compatible, three-state I/O
•JEDEC standard packaging
-44-pin 400 mil SOJ
-44-pin TSOP 2-400
•ESD protection 2000 volts
•Latch-up current 200 mA



Pinout

  Connection Diagram


Specifications

Parameter Symbol Min Max Unit
Voltage on VCC relative to GND Vt1 0.50 +5.0 V
Voltage on any pin relative to GND Vt2 0.50 VCC +0.50 V
Power dissipation PD 1.0 W
Storage temperature (plastic) Tstg 65 +150 °C
Ambient temperature with VCC applied Tbias 55 +125 °C
DC current into outputs (low) IOUT 20 mA



Description

The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words× 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.

Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output of AS7C31026B enable access times (tOE) of 5, 6, 7, 8 ns are ideal for high-performance applications.

When CE</a> is high, AS7C31026B enters standby mode.A write cycle is accomplished by asserting write enable (WE</a>) and chip enable (CE</a>). Data on the input pins I/O0 through I/O15 is written on the rising edge of WE</a> (write cycle 1) or CE</a> (write cycle 2). To avoid bus contention,external devices of AS7C31026B should drive I/O pins only after outputs have been disabled with output enable (OE</a>) or write enable (WE</a>).

A read cycle of AS7C31026B is accomplished by asserting output enable (OE</a>) and chip enable (CE</a>) with write enable (WE</a>) high. The AS7C31026B drive I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive or write enable is active, output drivers stay in high-impedance mode.


AS7C31026B provides multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be written and read. LB</a>
 controls the lower bits, I/O0 through I/O7, and UB</a> controls the higher bits, I/O8 through I/O15.

All chip inputs of AS7C31026B and outputs are TTL-compatible, and operation is from a single 3.3 V supply. The device is packaged in common industry standard packages.




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