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Part Number: AS7C3513B

 

 

 

 

 

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AS7C3513B Maximum Ratings

Parameter Symbol Min Max Unit
Voltage on VCC relative to GND Vt1 0.50 +5.0 V
Voltage on any pin relative to GND Vt2 0.50 VCC +0.50 V
Power dissipation PD 1.0 W
Storage temperature (plastic) Tstg 65 +150
Ambient temperature with VCC applied Tbias 55 +125
DC current into outputs (low) IOUT 20 mA

AS7C3513B Features

•Industrial and commercial temperature
•Organization: 32,768 words × 16 bits
•Center power and ground pins
•High speed
•10/12/15/20 ns address access time
•5, 6, 7, 8 ns output enable access time
•Low power consumption: ACTIVE
•288 mW / max @ 10 ns
•Low power consumption: STANDBY
•18 mW / max CMOS
•6T 0.18m CMOS Technology
•Easy memory expansion with CE , OE inputs
•TTL-compatible, three-state I/O
•44-pin JEDEC standard package
•400 mil SOJ
• 400 mil TSOP 2
• ESD protection > 2000 volts
• Latch-up current > 200 mA

AS7C3513B datasheet

AS7C3513B
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