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| Parameter | Symbol | Min | Max | Unit |
| Voltage on VCC relative to GND | Vt1 | 0.50 | +5.0 | V |
| Voltage on any pin relative to GND | Vt2 | 0.50 | VCC +0.50 | V |
| Power dissipation | PD | 1.0 | W | |
| Storage temperature (plastic) | Tstg | 65 | +150 | |
| Ambient temperature with VCC applied | Tbias | 55 | +125 | |
| DC current into outputs (low) | IOUT | 20 | mA |
•Industrial and commercial temperature
•Organization: 32,768 words × 16 bits
•Center power and ground pins
•High speed
•10/12/15/20 ns address access time
•5, 6, 7, 8 ns output enable access time
•Low power consumption: ACTIVE
•288 mW / max @ 10 ns
•Low power consumption: STANDBY
•18 mW / max CMOS
•6T 0.18m CMOS Technology
•Easy memory expansion with CE , OE inputs
•TTL-compatible, three-state I/O
•44-pin JEDEC standard package
•400 mil SOJ
• 400 mil TSOP 2
• ESD protection > 2000 volts
• Latch-up current > 200 mA
AS7C3513B
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