Features: • Transition Time 250 pS Typical• Hermetic Glass PackageSpecifications IF 50 mA VR 50 V PDISS 290 mW @ TC = 25 °C TJ -60 °C to +200 °C TSTG -60 °C to +200 °C JC 0.6 °C /mW<table widDescriptionThe ASI 5082-0180 is a Silicon Step Recovery Diode Desi...
ASI5082-0180: Features: • Transition Time 250 pS Typical• Hermetic Glass PackageSpecifications IF 50 mA VR 50 V PDISS 290 mW @ TC = 25 °C TJ -60 °C to +200 °C TSTG -60 °C to +200...
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Features: • Gold contact metalization• Passivated ChipSpecifications I 100 mA ...
Features: • Transition Time 95 pS• Hermetic Glass PackageSpecifications IF 50 mA...
Features: ·Direct Replacement for HP 5082-3170· Isolation = 20 dB min. at 10 GHz·Hermetic PackageS...
| IF | 50 mA |
| VR | 50 V |
| PDISS | 290 mW @ TC = 25 °C |
| TJ | -60 °C to +200 °C |
| TSTG | -60 °C to +200 °C |
| JC | 0.6 °C /mW |
The ASI 5082-0180 is a Silicon Step Recovery Diode Designed for Synthesiser and Sampler Applications Requiring a High Performance to Cost Ratio.