ASP-0910

ASP-0910 is a large signal,Class C common base,NPN silicon bipolar power transistor,housed in a BeO flange package for excellent thermal transfer.This device is designed for use as a 10 W driver or output amplifier for base station applications in cellular telephone systems operating in the 800 to 960 MHz frequency range.There are some features of ASP-0910 as follows.First is power out which is 10 W.The second is 25 V voltage.Then is efficiency:50% Min.The last one is 10:1 load mismatch tolerance.

What comes next is about the absolute maximum ratings of ASP-0910.The V_EBO (emitter-base voltage) is 4.0 V.The V_CES (collector-emitter voltage) is 50 V.The I_C (collector current) is 2.0 A.The P_T (power dissipation) is 25 W.The T_j (junction temperature) is 200.The T_STG (storage temperature) is from -65 to 150.

The following is about the electrical specifications of ASP-0910(T_A=25).The minimum P_out (output power) is 9 W and the typical is 10 W at V_CE=25 V,P_in=1 W,f=900 MHz.The minimum G_P (power gain) is 9.5 dB and the maximum is 10 dB at V_CE=25 V,P_in=1 W,f=900 MHz.The minimum _C (collector efficiency) is 50% and the typical is 55% at V_CE=25 V,P_in=1 W,f=900 MHz.The minimum load mismatch tolerance is 10:1 at V_CE=25 V,rated P_out,f=900 MHz.The minimum BV_CEO (collector-emitter voltage) is 24 V and the typical is 28 V at V_EB=open,I_C=50 mA.The minimum BV_CES (collector-emitter voltage) is 50 V and the typical is 55 V at V_EB=0 V,I_C=100 mA.The minimum BV_EBO (emitter-base voltage) is 35 V and the typical is 45 V at V_CB=open,I_E=15 mA.The minimum h_FE (forward current transfer ratio) is 20,the typical is 60 and the maximum is 120 at V_CE=5 V,I_C=1 A.The typical I_CES (collector leakage current) is 1 mA and the maximum is 5 mA at V_CE=26 V.The typical C_OB (collector-base capacitance) is 10 pF at f=1 MHz,V_CB=25 V,I_E=0 mA.