ASP-0955

ASP-0955 is a large signal,Class C common base,NPN silicon bipolar power transistor,housed in a BeO flange package for excellent thermal transfer.This device is designed for use as a 55 W driver or output amplifier for base station applications in cellular telephone systems operating in the 830 to 960 MHz frequency range.There are some features as follows.First is power out which is 55 W.The second is 25 V voltage.Then is efficiency:50% Min.The last one is 4.3:1 load mismatch tolerance.

What comes next is about the absolute maximum ratings.The V_EBO (emitter-base voltage) is 4.0 V.The V_CES (collector-emitter voltage) is 50 V.The I_C (collector current) is 8.0 A.The P_T (power dissipation) is 115 W.The T_j (junction temperature) is 200.The T_STG (storage temperature) is from -65 to 150.

The following is about the electrical specifications (T_A=25).The minimum P_out (output power) is 55 W and the typical is 58 W at V_CE=25 V,P_in=7 W,f=900 MHz.The minimum GP (power gain) is 8.9 dB and the typical is 9.2 dB at V_CE=25 V,P_in=7 W,f=900 MHz.The minimum C (collector efficiency) is 50% and the typical is 55% at V_CE=25 V,P_in=7 W,f=900 MHz.The minimum load mismatch tolerance is 4.3:1 at V_CE=25 V,rated P_out,f=900 MHz.The minimum BV_CEO (collector-emitter voltage) is 24 V and the typical is 28 V at V_EB=open,I_C=50 mA.The minimum BV_CES (collector-emitter voltage) is 50 V and the typical is 55 V at V_EB=0 V,I_C=100 mA.The minimum BV_EBO (emitter-base voltage) is 3.5 V and the typical is 4.5 V at V_CB=open,I_E=15 mA.The minimum h_FE (forward current transfer ratio) is 20,the typical is 60 and the maximum is 120 at V_CE=5 V,I_C=3 A.The typical I_CES (collector leakage current) is 1 mA and the maximum is 15 mA at V_CE=26 V.The typical C_OB (collector-base capacitance) is 62 pF at f=1 MHz,V_CB=25 V,I_E=0 mA.