AT-31011-TR1G

Transistors Bipolar (BJT) Transistor Si Low Current

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SeekIC No. : 00208815 Detail

AT-31011-TR1G: Transistors Bipolar (BJT) Transistor Si Low Current

floor Price/Ceiling Price

US $ .1~.11 / Piece | Get Latest Price
Part Number:
AT-31011-TR1G
Mfg:
Avago Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • 3000~4200
  • 4200~6000
  • 6000~12000
  • Unit Price
  • $.11
  • $.11
  • $.11
  • $.1
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/4

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 5.5 V
Emitter- Base Voltage VEBO : 1.5 V Maximum DC Collector Current : 0.016 A
DC Collector/Base Gain hfe Min : 70 at 1 mA at 2.7 V Configuration : Single Dual Emitter
Maximum Operating Frequency : 30000 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-143
Packaging : Reel    

Description

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-143
Emitter- Base Voltage VEBO : 1.5 V
Configuration : Single Dual Emitter
Collector- Emitter Voltage VCEO Max : 5.5 V
Maximum Operating Frequency : 30000 MHz
DC Collector/Base Gain hfe Min : 70 at 1 mA at 2.7 V
Maximum DC Collector Current : 0.016 A


Parameters:

Technical/Catalog InformationAT-31011-TR1G
VendorAvago Technologies US Inc.
CategoryDiscrete Semiconductor Products
Frequency - Transition-
Noise Figure (dB Typ @ f)0.9dB ~ 1.2dB @ 900MHz
Current - Collector (Ic) (Max)16mA
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 1mA, 2.7V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)5.5V
Gain11dB ~ 13dB
Power - Max150mW
Compression Point (P1dB)9dBm
Package / CaseSOT-143-4, TO-253-4
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AT 31011 TR1G
AT31011TR1G



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