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Part Number: AT-31625

 

MFG: HP

 

D/C: 06+

Description: Hewlett Packard's AT-31625 is a low cost, NPN medium power silicon bipolar junction transistor housed in a mi-niature,M...


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AT-31625 General Description


Hewlett Packard's AT-31625 is a low cost, NPN medium power silicon bipolar junction transistor housed in a mi-niature,MSOP-3 surface mount plastic package. The AT-31625 can be used as a driver device or an output device, depending on the specific application. The AT-31625 features +28 dBm CW output power when operated at 4.8 volts. Excellent gain and superior efficiency make the AT-31625 ideal for use in battery powered systems.

The AT-31625 is fabricated with Hewlett Packard's 10 GHz Ft Self- Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices.

AT-31625 Maximum Ratings

Symbol
Parameter
Units
Absolute Maximum[1]
VEBO
 Emitter-Base Voltage
V
1.4
VCBO
 Collector-Base Voltage
V
16.0
VCEO
 Collector-Emitter Voltage
V
9.5
IC
 Collector Current
mA
320
PT
 Power Dissipation [2]
mW
1.0
Tj
 Junction Temperature
°C
150
TSTG
 Storage Temperature
°C
-65 to 150

AT-31625 Features

• 4.8 Volt Operation
• +28.0 dBm Pout @ 900 MHz, Typ.
• 70% Collector Efficiency @ 900 MHz, Typ.
• 9 dB Power Gain @ 900 MHz, Typ.
• -31 dBc IMD3 @ Pout of 21 dBm per Tone, 900 MHz, Typ.
• 50% Smaller than SOT-223 Package

AT-31625 Typical Application

• Medium Power Driver Device for Cellular/PCS, ISM 900, WLAN
• Output Power Device for ISM 900, Cordless, WLAN

AT-31625 Connection Diagram

AT-31625 Connection Diagram

AT-31625 datasheet

AT-31625
PDF/DataSheet Download

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Related Part Number

AT-31625 Relative Products

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