AT-31625

Features:

• 4.8 Volt Operation
• +28.0 dBm P_out @ 900 MHz, Typ.
• 70% Collector Efficiency @ 900 MHz, Typ.
• 9 dB Power Gain @ 900 MHz, Typ.
• -31 dBc IMD₃ @ P_out of 21 dBm per Tone, 900 MHz, Typ.
• 50% Smaller than SOT-223 Package



Application

• Medium Power Driver Device for Cellular/PCS, ISM 900, WLAN
• Output Power Device for ISM 900, Cordless, WLAN



Pinout




Specifications

Symbol	Parameter	Units	Absolute Maximum[1]
VEBO	Emitter-Base Voltage	V	1.4
VCBO	Collector-Base Voltage	V	16.0
VCEO	Collector-Emitter Voltage	V	9.5
IC	Collector Current	mA	320
PT	Power Dissipation [2]	mW	1.0
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to 150

Description

Hewlett Packard's AT-31625 is a low cost, NPN medium power silicon bipolar junction transistor housed in a mi-niature,MSOP-3 surface mount plastic package. The AT-31625 can be used as a driver device or an output device, depending on the specific application. The AT-31625 features +28 dBm CW output power when operated at 4.8 volts. Excellent gain and superior efficiency make the AT-31625 ideal for use in battery powered systems.

The AT-31625 is fabricated with Hewlett Packard's 10 GHz Ft Self- Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices.