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MFG:HP  Package Cooled:SOT-143  D/C:05+  

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Part Number: AT-32011

 

MFG: HP

Package Cooled: SOT-143

D/C: 05+

Description: Hewlett Packard's AT-32011 and AT-32033 are high performance NPN bipolar transistors that have...


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AT-32011 General Description


     Hewlett Packard's AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-32033 uses the 3 lead SOT-23, while the AT-320 11 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques.

The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry yields an easy to match to and extremely fast transistor with moderate power, low noise resistance, and low operating
currents.

Optimized performance at 2.7V makes these devices ideal for use in 900MHz,1.8GHz, and 2.4GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield 1.2 dB noise figures with 12 dB or more associated gain at a 2.7 V, 2 mA bias, with noise performance being relatively insensitive to input match. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications. Voltage breakdowns are high enough for use at 5 volts.

The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett Packard's 10 GHz ft, 30 GHz fMAX Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation,selfalignment techniques, and gold metalization in the fabrication of these devices.

AT-32011 Maximum Ratings

Symbol
Parameter
Units
Absolute Maximum[1]
VEBO
 Emitter-Base Voltage
V
1.5
VCBO
 Collector-Base Voltage
V
11
VCEO
 Collector-Emitter Voltage
V
5.5
IC
 Collector Current
mA
32
PT
 Power Dissipation [2,3]
mW
200
Tj
 Junction Temperature
°C
150
TSTG
 Storage Temperature
°C
-65 to 150

AT-32011 Features

• High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation
• 900 MHz Performance:
   AT-32011: 1 dB NF, 14 dB GA
   AT-32033: 1 dB NF, 12.5 dB GA
• Characterized for End-Of- Life Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT Plastic Packages
• Tape-And-Reel Packaging Option Available[1]

AT-32011 datasheet

AT-32011
PDF/DataSheet Download

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Related Part Number

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