AT-36408

Features:

• 4.8 Volt Pulsed Operation (pulse width = 577 sec, duty cycle = 12.5%)
• +35.0 dBm P_out @ 900 MHz, Typ.
• 65% Collector Efficiency @ 900 MHz, Typ.
• 9 dB Power Gain @ 900 MHz, Typ.
• Internal Input Pre-Matching Facilitates Cascading



Application

• Output Power Device for GSM Class IV Handsets



Pinout




Specifications

Symbol	Parameter	Units	Absolute Maximum[1]
VEBO	Emitter-Base Voltage	V	1.4
VCBO	Collector-Base Voltage	V	16.0
VCEO	Collector-Emitter Voltage	V	9.5
IC	Collector Current	mA	1.7
PT	Power Dissipation [2,3]	mW	8.6
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to 150

Description

  Hewlett Packard's AT-36408 combines internal input prematching with low cost,NPN power silicon bipolar junction transistors in a SOIC-8 surface mount plastic package. This device is designed for use as the output device for GSM Class IV handsets. At 4.8 volts, the device features +35 dBm pulsed output power,superior power added efficiency, and excellent gain, making the AT-36408 an excellent choice for battery powered systems.

The AT-36408is fabricated with Hewlett Packard's 10GHz F_t Self-Aligned-Transistor(SAT)process.The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability of AT-36408 are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices.