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MFG:Agilent  D/C:2000  

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Part Number: AT-36408

 

MFG: Agilent

 

D/C: 2000

Description: Hewlett Packard's AT-36408 combines internal input prematching with low cost,NPN power silicon bipolar junction ...


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AT-36408 General Description


  Hewlett Packard's AT-36408 combines internal input prematching with low cost,NPN power silicon bipolar junction transistors in a SOIC-8 surface mount plastic package. This device is designed for use as the output device for GSM Class IV handsets. At 4.8 volts, the device features +35 dBm pulsed output power,superior power added efficiency, and excellent gain, making the AT-36408 an excellent choice for battery powered systems.

The AT-36408is fabricated with Hewlett Packard's 10GHz Ft Self-Aligned-Transistor(SAT)process.The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices.

AT-36408 Maximum Ratings

Symbol
Parameter
Units
Absolute Maximum[1]
VEBO
 Emitter-Base Voltage
V
1.4
VCBO
 Collector-Base Voltage
V
16.0
VCEO
 Collector-Emitter Voltage
V
9.5
IC
 Collector Current
mA
1.7
PT
 Power Dissipation [2,3]
mW
8.6
Tj
 Junction Temperature
°C
150
TSTG
 Storage Temperature
°C
-65 to 150

AT-36408 Features

• 4.8 Volt Pulsed Operation (pulse width = 577 sec, duty cycle = 12.5%)
• +35.0 dBm Pout @ 900 MHz, Typ.
• 65% Collector Efficiency @ 900 MHz, Typ.
• 9 dB Power Gain @ 900 MHz, Typ.
• Internal Input Pre-Matching Facilitates Cascading

AT-36408 Typical Application

• Output Power Device for GSM Class IV Handsets

AT-36408 Connection Diagram

AT-36408 Connection Diagram

AT-36408 datasheet

AT-36408
PDF/DataSheet Download

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