AT-41435G

Transistors Bipolar (BJT) Transistor Si

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SeekIC No. : 00207362 Detail

AT-41435G: Transistors Bipolar (BJT) Transistor Si

floor Price/Ceiling Price

US $ 3.51~5.85 / Piece | Get Latest Price
Part Number:
AT-41435G
Mfg:
Avago Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $5.85
  • $4.88
  • $3.9
  • $3.51
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 12 V
Emitter- Base Voltage VEBO : 1.5 V Maximum DC Collector Current : 0.06 A
DC Collector/Base Gain hfe Min : 30 Configuration : Single Dual Emitter
Maximum Operating Frequency : 8000 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : Case 35 micro-X
Packaging : Bulk    

Description

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 12 V
DC Collector/Base Gain hfe Min : 30
Packaging : Bulk
Emitter- Base Voltage VEBO : 1.5 V
Configuration : Single Dual Emitter
Maximum Operating Frequency : 8000 MHz
Package / Case : Case 35 micro-X
Maximum DC Collector Current : 0.06 A


Parameters:

Technical/Catalog InformationAT-41435G
VendorAvago Technologies US Inc.
CategoryDiscrete Semiconductor Products
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)1.3dB ~ 3dB @ 1GHz ~ 4GHz
Current - Collector (Ic) (Max)60mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 8V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Gain18.5dB ~ 10dB
Power - Max500mW
Compression Point (P1dB)19dBm ~ 18.5dBm
Package / Case*
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AT 41435G
AT41435G
516 1856 ND
5161856ND
516-1856



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