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Part Number: AT-64023

 

MFG: HP

 

D/C: 08+

Description: The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good ther...


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AT-64023 General Description


The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and oscillator applications operating over VHF, UHF and microwave frequencies.

Excellent device uniformity,performance and reliability are produced by the use of ionimplantation,selfalignment techniques, and gold metallization in the fabrication of these devices. The use of ion-implanted ballast resistors ensures uniform current distribution through the multiple emitter fingers. 

AT-64023 Maximum Ratings

Symbol
Parameter
Units
Absolute Maximum[1]
VEBO
 Emitter-Base Voltage
V
2.2
VCBO
 Collector-Base Voltage
V
40
VCEO
 Collector-Emitter Voltage
V
20
IC
 Collector Current
mA
200
PT
 Power Dissipation [2,3]
mW
3
Tj
 Junction Temperature
°C
200
TSTG
 Storage Temperature
°C
-65 to 200

AT-64023 Features

• High Output Power:
   27.5 dBm Typical P1 dB at 2.0 GHz
   26.5 dBm Typical P1 dB at 4.0 GHz
• High Gain at 1 dB
   Compression:
   12.5 dB Typical G1 dB at 2.0 GHz
   9.5 dB Typical G1 dB at 4.0 GHz
• 35% Total Efficiency
• Emitter Ballast Resistors
• Hermetic, Metal/Beryllia Stripline Package

AT-64023 datasheet

AT-64023
PDF/DataSheet Download

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