AT002N5-00

Features:

50 dB Range
Low Insertion Loss
Fast Switching
Meets MIL-STD-883 Screening Requirements



Specifications

Characteristic	Value
RF Input Power (RF In)	10 mW > 500 MHz 0/-8 V Control 4 mW 50 MHz, -8 V Control
Control Voltage (VC)	+0.2 V, -10 V
Operating Temperature (TOP)	-55°C to +125°C
Storage Temperature (TST)	65°C to +150°C
Thermal Resistance (JC)	25°C/W

Description

        The AT002N5-00 attenuator provides up to 50 dB variable attenuation from DC3 GHz under nonreflective conditions. Attenuation can be controlled by varying each of the two control bias voltages from 0 to -5 V. The control current of AT002N5-00 is less than 100 A and the attenuator will operate at 0 dBm with switching time, typically 10 ns. The chip is configured using two "T" attenuators in the series and two in parallel. This device may be used with a single bias (V₁ = 0) but with reduced attenuation and match. Applications include fast response AGC circuits re-quiring high attenuation, such as for radar processing, instrumentation, and levelers in RF equipment.