AT49BV002NT

Features: • Single Supply for Read and Write: 2.7V to 3.6 (BV), 3.0 to 3.6V (LV)• Fast Read Access Time - 70 ns• Internal Program Control and Timer• Sector Architecture One 16K Byte Boot Block with Programming Lockout Two 8K Byte Parameter Blocks Two Main Memory Blocks (96K...

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AT49BV002NT Picture
SeekIC No. : 004290201 Detail

AT49BV002NT: Features: • Single Supply for Read and Write: 2.7V to 3.6 (BV), 3.0 to 3.6V (LV)• Fast Read Access Time - 70 ns• Internal Program Control and Timer• Sector Architecture One 1...

floor Price/Ceiling Price

Part Number:
AT49BV002NT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/2

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Product Details

Description



Features:

• Single Supply for Read and Write: 2.7V to 3.6 (BV), 3.0 to 3.6V (LV)
• Fast Read Access Time - 70 ns
• Internal Program Control and Timer
• Sector Architecture
One 16K Byte Boot Block with Programming Lockout
Two 8K Byte Parameter Blocks
Two Main Memory Blocks (96K, 128K) Bytes
• Fast Erase Cycle Time - 10 seconds
• Byte By Byte Programming - 30 ms/Byte Typical
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
25 mA Active Current
50 mA CMOS Standby Current
• Typical 10,000 Write Cycles



Pinout

  Connection Diagram


Specifications

Temperature Under Bias................................ -55°C to +125°C
Storage Temperature .....................................-65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V

*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.




Description

The AT49BV/LV002(N)(T) is a 3-volt-only in-system reprogrammable Flash Memory. Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range.   When AT49BV002NT is deselected, the CMOS standby current is less than 50 mA.




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