AT49BV4096A General Description
AT49BV4096A Maximum Ratings
Temperature Under Bias................................. -55°C to +125°C
Storage Temperature..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground.......................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground................................-0.6V to V CC + 0.6V
Voltage on RESET
with Respect to Ground.......................................-0.6V to +13.5V
AT49BV4096A Features
2.7V to 3.6V Read/Write Operation
Fast Read Access Time - 120 ns
Internal Erase/Program Control
Sector Architecture
One 8K Words (16K bytes) Boot Block with Programming Lockout
Two 4K Words (8K bytes) Parameter Blocks
One 240K Words (480K bytes) Main Memory Array Block
Fast Sector Erase Time - 10 seconds
Byte-by-Byte or Word-By-Word Programming - 30 s Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low-Power Dissipation
25 mA Active Current
50 A CMOS Standby Current
Typical 10,000 Write Cycles
AT49BV4096A Connection Diagram
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