AT49BV512-12TC

Timing Type :
Packaging :
Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 2.7 V
Mounting Style : SMD/SMT
Memory Type : NOR
Architecture : Sectored
Data Bus Width : 8 bit
Maximum Operating Current : 25 mA
Operating Temperature : + 70 C
Interface Type : Parallel
Package / Case : TSOP-32
Memory Size : 512 Kbit
Access Time : 120 ns


Features:

• Single Supply Voltage, Range 2.7V to 3.6V
• Single Supply for Read and Write
• Fast Read Access Time - 120 ns
• Internal Program Control and Timer
• 8K bytes Boot Block With Lockout
• Fast Erase Cycle Time - 10 seconds
• Byte By Byte Programming - 30 µ µ µ µs/Byte typical
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
   25 mA Active Current
   50 µ µ µ µA CMOS Standby Current
• Typical 10,000 Write Cycles


Pinout




Specifications

Temperature Under Bias ............................... -55°C to +125°C
Storage Temperature .................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V_CC + 0.6V
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V


Description

The AT49BV512 is a 3-volt-only, 512K Flash memories organized as 65,536 words of 8 bits each.  Manufactured with Atmel's advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over the commercial temperature range. When v are deselected, the CMOS standby current is less than 50 µA. 

To allow for simple in-system reprogrammability, the AT49BV512 does not require high input voltages for programming.  Three-volt-only commands determine the read and programming operation of the device.  Reading data out of the device is similar to reading from an EPROM.  Reprogramming the AT49BV512  is performed by erasing the entire 1 megabit of memory and then programming on a byte by byte basis. The typical byte programming time is a fast 30 µs.  The end of a program cycle can be optionally detected by the DATA polling feature.  Once the end of a byte program cycle has been detected, a new access for a read or program can begin.  The typical number of program and erase cycles is in excess of 10,000 cycles.

The optional 8K bytes boot block section includes a reprogramming write lock out feature to provide data integrity. The boot sector of AT49BV512-12TC is designed to contain user secure code, and when the feature is enabled, the boot sector is permanently protected from being reprogrammed.

Parameters:

Technical/Catalog Information	AT49BV512-12TC
Vendor	Atmel
Category	Integrated Circuits (ICs)
Memory Type	FLASH
Memory Size	512K (64K x 8)
Speed	120ns
Interface	Parallel
Package / Case	32-TSOP
Packaging	Tray
Voltage - Supply	2.7 V ~ 3.6 V
Operating Temperature	0°C ~ 70°C
Format - Memory	FLASH
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	AT49BV512 12TC AT49BV51212TC