AT49BV8011

The AT49BV8011 is designed as one kind of 2.7- to 3.3-volt 8-megabit Flash memory that is organized as 524,288 words of 16 bits each or 1,048,576 bytes of 8 bits each. AT49BV8011 can be erased at one time by using the 6-byte chip erase software code and will internally time the erase operation after the chip erase has been initiated, so that no external clocks are required.

Features of the AT49BV8011 are:(1)single supply for read and write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV);(2)access time-90 ns;(3)fast word program time-20 s;(4)fast sector erase time-200 ms;(5)dual plane organization, permitting concurrent read while program/erase;(6)top or bottom boot block configuration available;(7)TSOP and CBGA package options;(8)sector program unlock command;(9)RESET input for device initialization;(10)optional Vpp pin for fast programming.

The absolute maximum ratings of the AT49BV8011 can be summarized as:(1)temperature under bias:-55°C to +125°C;(2)storage temperature:-65°C to +150°C;(3)all input voltages (including NC pins) with respect to ground:-0.6V to +6.25V;(4)all output voltages with respect to ground:-0.6V to Vcc+0.6V;(5)voltage on OE with respect to ground:-0.6V to +13.5V. If you want to know more information such as the electrical characteristics about the AT49BV8011, please download the datasheet in www.seekic.com or www.chinaicmart.com .