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Part Number: AT49F8011
Description: The AT49F8011(T) is a 5.0 volt 8-megabit Flash memory organized as 524,288 words of 16 bits each or 1,048,576 bytes of ...
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AT49F8011
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DataSheet
General Description
AT49F8011 General Description
The AT49F8011(T) is a 5.0 volt 8-megabit Flash memory organized as 524,288 words of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 22 sectors for erase operations. The device is offered in 48-pin TSOP and 48-ball CBGA packages. The device has CE, and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single 5.0V power supply, making it ideally suited for in-system programming.
AT49F8011 Maximum Ratings
Temperature Under Bias......................... -55° C to +125°C
Storage Temperature ............................. -65° C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .........................-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ................................-0.6V to +13.5V
Storage Temperature ............................. -65° C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .........................-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ................................-0.6V to +13.5V
AT49F8011 Features
• 4.5V to 5.5V Read/Write
• Access Time - 70 ns
• Sector Erase Architecture
Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout
Two 16K Word (32K Byte) Sectors with Individual Write Lockout
Two 8K Word (16K Byte) Sectors with Individual Write Lockout
Four 4K Word (8K Byte) Sectors with Individual Write Lockout
• Fast Word Program Time - 10 s
• Fast Sector Erase Time - 200 ms
• Dual Plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Four 4K Word, Two 8K Word and Two 16K Word Sectors
Memory Plane B: Fourteen 32K Word Sectors
• Erase Suspend Capability
Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector
• Low-power Operation
40 mA Active
10 A Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• RESET Input for Device Initialization
• Sector Program Unlock Command
• TSOP and CBGA Package Options
• Top or Bottom Boot Block Configuration Available
• Access Time - 70 ns
• Sector Erase Architecture
Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout
Two 16K Word (32K Byte) Sectors with Individual Write Lockout
Two 8K Word (16K Byte) Sectors with Individual Write Lockout
Four 4K Word (8K Byte) Sectors with Individual Write Lockout
• Fast Word Program Time - 10 s
• Fast Sector Erase Time - 200 ms
• Dual Plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Four 4K Word, Two 8K Word and Two 16K Word Sectors
Memory Plane B: Fourteen 32K Word Sectors
• Erase Suspend Capability
Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector
• Low-power Operation
40 mA Active
10 A Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• RESET Input for Device Initialization
• Sector Program Unlock Command
• TSOP and CBGA Package Options
• Top or Bottom Boot Block Configuration Available
AT49F8011 Connection Diagram
AT49F8011
PDF/DataSheet Download
- Datasheet: AT49F8011
- File Size: 133992 KB
- Manufacturer:
- Click here to Download
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