Position: Home  > All Categories> Integrated Circuits (ICs) > ATF-13336

ATF-13336

Features: * Low Noise Figure:1.4 dB Typical at 12? GHz* High Associated Gain:9.0 dB Typical at 12 GHz* High Output Power:17.5 dBm Typical P1 dB at 12?GHz* Cost Effective Ceramic Microstrip Package* Tape-and-Reel Packaging option Available[1]Specifications Symbol Parameter Units Absolute M...

product image

ATF-13336 Picture
See larger image
SeekIC No. : 004291169 Detail

ATF-13336: Features: * Low Noise Figure:1.4 dB Typical at 12? GHz* High Associated Gain:9.0 dB Typical at 12 GHz* High Output Power:17.5 dBm Typical P1 dB at 12?GHz* Cost Effective Ceramic Microstrip Package* ...

ATF-13336 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
ATF-13336
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/16

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

* Low Noise Figure:1.4 dB Typical at 12? GHz
* High Associated Gain:9.0 dB Typical at 12 GHz
* High Output Power:17.5 dBm Typical P1 dB  at 12?GHz
* Cost Effective Ceramic Microstrip Package
* Tape-and-Reel Packaging option Available[1]


Specifications

Symbol Parameter Units Absolute Maximum
VDS Drain-Source Voltage V +5
VGS Gate-Source Voltage V -4
VGD Gate-Drain Voltage V -6
IDS Drain Current mA IDSS
PT Power Dissipation [2,3] mW 225
TCH Channel Temperature °C 175
TSTG Storage Temperature °C -65 to +175



Description

The ATF-13336 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise  figure makes this device appropriate for use in low noise amplifiers operating in the 2-16 GHzfrequency range.

This GaAs FET device ATF-13336 has a nominal 0.3 micron gate length with a total gate periphery of 250 microns.  Proven gold based metallization systems and nitride passivation assure a rugged,reliable device.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Cable Assemblies
CS1W-CN114
XW2Z-500T
View more