Position: Home  > All Categories> Integrated Circuits (ICs) > ATF-46101

ATF-46101

Features: • High Output Power: 27.0ÊdBm Typical P 1 dB at 4ÊGHz• High Gain at 1 dB Compression: 12.0ÊdB Typical G 1 dB at 4ÊGHz• High Power Efficiency: 38% Typical at 4ÊGHzSpecifications Symbol Parameter Units AbsoluteMaximum[1] VDS Drain...

product image

ATF-46101 Picture
See larger image
SeekIC No. : 004291253 Detail

ATF-46101: Features: • High Output Power: 27.0ÊdBm Typical P 1 dB at 4ÊGHz• High Gain at 1 dB Compression: 12.0ÊdB Typical G 1 dB at 4ÊGHz• High Power Efficiency: 38% ...

ATF-46101 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
ATF-46101
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/4

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• High Output Power: 27.0ÊdBm Typical P 1 dB at 4ÊGHz
• High Gain at 1 dB Compression: 12.0ÊdB Typical G 1 dB at 4ÊGHz
• High Power Efficiency: 38% Typical at 4ÊGHz


Specifications

Symbol Parameter Units Absolute
Maximum[1]
VDS Drain Source Voltage V +14
VGS Gate Source Voltage V -7
VGD Gate-Drain Voltage V -16
ID Drain Current mA IDSS
PT Power Dissipation [2,3] mW 2.0
TCH Channel Temperature °C 175
TSTG Storage Temperature °C -65 to +175
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TMOUNTING SURFACE = 25°C.
3. Derate at 13 mW/°C for TCASE > 25°C.
4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information.


Description

The ATF-46101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency range. This nominally 0.5Êmicron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers. Total gate periphery is 1.25Êmillimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.

This device ATF-46101 is suitable for applications in space, airborne, military ground and shipboard, and commercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and minimum thermal resistance.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Circuit Protection
A50QS75-4Y
F-17*77
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Memory Cards, Modules
WT32
VTL5C7
View more