AV850M1-00

Features:  Single Voltage Control 40 dB Attenuation Range Balanced 0.25 m MESFET Non-Reflective Design 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 MT 2010SpecificationsOperating Temperature (TC) -55°C to +90°CStorage Temperature (TST) -65°C to +150°CControl Voltage (...

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SeekIC No. : 004291787 Detail

AV850M1-00: Features:  Single Voltage Control 40 dB Attenuation Range Balanced 0.25 m MESFET Non-Reflective Design 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 MT 2010Specification...

floor Price/Ceiling Price

Part Number:
AV850M1-00
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

 Single Voltage Control
 40 dB Attenuation Range
 Balanced 0.25 m MESFET Non-Reflective Design
 100% On-Wafer RF and DC Testing
 100% Visual Inspection to MIL-STD-883 MT 2010



Specifications

Operating Temperature (TC)         -55°C to +90°C
Storage Temperature (TST)        -65°C to +150°C
Control Voltage (VC)                                     -7 VDC
Power In (PIN)                                             30 dBm
Junction Temperature (TJ)                           175°C



Description

Alpha's AV850M1-00 MMIC voltage variable attenuator is a balanced configuration incorporating Lange couplers at input and output.The attenuator has a typical insertion loss of 2.5 dB over the 1840 GHz band with a worst-case insertion loss of 3.5 dB across the full 1850 GHz band. The attenuation range is 35 dB over the full 1850 GHz band while typical I/P and O/P return loss is better than 13 dB for all attenuation states. The chip uses Alpha's proven 0.25 m MESFET technology and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The MMICs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for insertion loss, full attenuation and I/P and O/P match over the 1850 GHz band for guaranteed performance.




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