AV850M2-00

Features: ` Dual Voltage Control` 35 dB Attenuation Range` Triple Gate 0.25 m MESFET Design` +10 dBm P1 dB All Attenuation States` 100% On-Wafer RF and DC Testing` 100% Visual Inspection to MIL-STD-883 MT 2010SpecificationsOperating Temperature (TC) -55°C to +90°CStorage Temperature (TST) -65°C to...

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SeekIC No. : 004291788 Detail

AV850M2-00: Features: ` Dual Voltage Control` 35 dB Attenuation Range` Triple Gate 0.25 m MESFET Design` +10 dBm P1 dB All Attenuation States` 100% On-Wafer RF and DC Testing` 100% Visual Inspection to MIL-STD-...

floor Price/Ceiling Price

Part Number:
AV850M2-00
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

` Dual Voltage Control
` 35 dB Attenuation Range
` Triple Gate 0.25 m MESFET Design
` +10 dBm P1 dB All Attenuation States
` 100% On-Wafer RF and DC Testing
` 100% Visual Inspection to MIL-STD-883 MT 2010



Specifications

Operating Temperature (TC)      -55°C to +90°C
Storage Temperature (TST)     -65°C to +150°C
Control Voltage (VC)                                   -7VDC
Power In (PIN)                                         30 dBm
Junction Temperature (TJ)                        175°C



Description

Alpha's AV850M2-00 MMIC voltage variable attenuator is a standard TEE configuration incorporating triple-gate 0.25 m power MESFETs. The attenuator has a typical insertion loss of 3 dB over the 1840 GHz band. The attenuation range is 35 dB while typical I/P and O/P return loss is better than 6 dB.The chip uses Alpha's proven 0.25 m MESFET technology and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability.The MMICs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. This chip incorporates triple-gate FETs which results in less attenuation variation over temperature as well as better power handling performance at all attenuation states. All chips are screened for insertion loss, full attenuation and I/P and O/P match over the 1840 GHz band for guaranteed performance.




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