AWT6134

Features:

• InGaP HBT Technology
• High Efficiency: 39%
• Low Quiescent Current: 48 mA
• Low Leakage Current in Shutdown Mode: <1 A
• VREF = +2.8 V (+2.7 V min over temp)
• Optimized for a 50 System
• Low Profile Miniature Surface Mount Package:1.56mm Max
• CDMA 1XRTT Compliant
• CDMA 1xEV-DO Compliant


Application

Korean PCS CDMA Wireless Handsets


Pinout





Specifications

PARAMETER	MIN	MAX	UNIT
Supply Voltage (VCC )	0	+5	V
Mode Control Voltage (VMODE)	0	+3.5	V
Reference Voltage (VREF)	0	+3.5	V
RF Input Power (PIN)	-	+10	dBm
Storage Temperature (TSTG)	-40	+150

Description

The AWT6134 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. The PA module is optimized for VREF = +2.8 V,a requirement for compatibility with the Qualcomm 6000 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4mm x 4mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 system.