AWT6302

• InGaP HBT Technology
• High Efficiency: 40%
• Low Quiescent Current: 50 mA
• Low Leakage Current in Shutdown Mode: <1 A
• VREF = +2.8 V (+2.7 V min over temp)
• Optimized for a 50 System
• Low Profile Miniature Surface Mount Package:1.1mm
• CDMA 1XRTT, 1xEV-DO Compliant
• Pinout Enables Easy Phone Board Migration From 4mm x 4mm Package

• PCS CDMA Wireless Handsets
• Dual Band CDMA Wireless Handsets

Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions.Exposure to absolute ratings for extended periods of time may adversely affect reliability.

The AWT6302 meets the increasing demands for higher efficiency and linearity in CDMA 1X handsets. The package pinout was chosen to enable handset manufacturers to switch from a 4 x 4 mm PA module with very few layout changes to the phone board. The PA module is optimized for Vref = +2.85 V. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 3 x 3 x 1.1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 system.