Am29LV116B

The Am29LV116B is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes. The device is offered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7DQ0. All read, program, and erase operations are accomplished using only a single power supply. The device can also be programmed in standard EPROM programmers.

The standard device offers access times of 80, 90, and 120 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm-an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four.

Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm-an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin.