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Am50DL128CG

Features: The Am29DL640G is a 64 megabit, 3.0 volt-only flashmemory device, organized as 4,194,304 words of 16bits each or 8,388,608 bytes of 8 bits each. Wordmode data appears on DQ15DQ0; byte mode dataappears on DQ7DQ0. The device is designed to beprogrammed in-system with the standard 3.0 volt ...

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SeekIC No. : 004283865 Detail

Am50DL128CG: Features: The Am29DL640G is a 64 megabit, 3.0 volt-only flashmemory device, organized as 4,194,304 words of 16bits each or 8,388,608 bytes of 8 bits each. Wordmode data appears on DQ15DQ0; byte mode...

Am50DL128CG Data Sheet

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Part Number:
Am50DL128CG
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

The Am29DL640G is a 64 megabit, 3.0 volt-only flashmemory device, organized as 4,194,304 words of 16bits each or 8,388,608 bytes of 8 bits each. Wordmode data appears on DQ15DQ0; byte mode dataappears on DQ7DQ0. The device is designed to beprogrammed in-system with the standard 3.0 volt VCCsupply, and can also be programmed in standardEPROM programmers.

The device is available with an access time of 70 or 85ns and is offered in a 88-ball FBGA package. Standardcontrol pins-chip enable (CE#f), write enable (WE#),and output enable (OE#)-control normal read andwrite operations, and avoid bus contention issues.

The device requires only a single 3.0 volt power sup-ply for both read and write functions. Internally gener-ated and regulated voltages are provided for theprogram and erase operations.




Specifications

Storage Temperature
Plastic Packages . . . . . . . . . . . .. 55°C to +125°C
Ambient Temperature
with Power Applied  . . . . . . . . . .  40°C to +85°C
Voltage with Respect to Ground
VCCf, VCCs (Note 1) . . . . . . . . . . . .0.5 V to +4.0 V
RESET# (Note 2)  . . . . . . . . . . .... .0.5 V to +12.5 V
WP#/ACC . . . . . . . . . . . . . . . . .... .0.5 V to +10.5 V
All other pins (Note 1) . . . . . ... 0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3)  . . . . .   200 mA


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