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Part Number: Am55DL128C8G

 

 

 

 

 

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Am55DL128C8G Maximum Ratings

Storage Temperature
Plastic Packages . . . . . . . . . . . . . 55°C to +125°C
Ambient Temperature
with Power Applied  . . . . . . . . . . . 30°C to +85°C
Voltage with Respect to Ground
VCCf, VCCs (Note 1) . . . . . . . . . . . .0.5 V to +4.0 V
RESET# (Note 2)  . . . . . . . . . . ... .0.5 V to +12.5 V
WP#/ACC . . . . . . . . . . . . . . . . ... .0.5 V to +10.5 V
All other pins (Note 1) . . . . . . 0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3)  . . . . .  200 mA

Am55DL128C8G Features

The Am29DL640G is a 64 megabit, 3.0 volt-only flashmemory device, organized as 4,194,304 words of 16bits each or 8,388,608 bytes of 8 bits each. Wordmode data appears on DQ15DQ0; byte mode dataappears on DQ7DQ0. The device is designed to beprogrammed in-system with the standard 3.0 volt VCCsupply, and can also be programmed in standardEPROM programmers.

The device is available with an access time of 70 or 85ns and is offered in a 93-ball FBGA package. Standardcontrol pins-chip enable (CE#f), write enable (WE#),and output enable (OE#)-control normal read andwrite operations, and avoid bus contention issues.

The device requires only a single 3.0 volt power sup-ply for both read and write functions. Internally gener-ated and regulated voltages are provided for theprogram and erase operations.

Am55DL128C8G datasheet

Am55DL128C8G
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