BAR63V-04-GS08

The PIN Diode BAR63V-04-GS08 is designed for RF signal tuning and is characterized by a very low reverse Capacitance. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 while the low reverse capacitance offers a high isolation. Typical applications for this PIN Diodes are wireless, mobile and TV-systems.It has four unique features:(1)low forward resistance;(2)very small reverse capacitance;(3)lead (Pb)-free component;(4)component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

There are some absolute maximum ratings about BAR63V-04-GS08 when Tamb is 25°C,unless otherwise specified.(1):reverse voltage(VR) is 50 V;(2):forward current(IF) is 100 mA;(3):junction temperature(Tj) is 150°C;(4):storage temperature range(Tstg) is - 55°C to + 150°C.

Otherwise,there are also some electrical characteristics about BAR63V-04-GS08 when Tamb is 25°C,unless otherwise specified.(1):reverse voltage(IR = 10 A, VR) is 50 V;(2):reverse current(VR = 35 V, IR) is 10 nA;(3):forward voltage(IF = 100 mA, VF) is 1.2 V;(4):diode capacitance(f = 1 MHz, VR = 0 ,CD) is 0.28 pF or is 0.23 pF min and 0.3 pF typ when f is 1 MHz and VR is 5 V.