BC338

Transistors Bipolar (BJT) NPN 25V 800mA HFE/63

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SeekIC No. : 00212706 Detail

BC338: Transistors Bipolar (BJT) NPN 25V 800mA HFE/63

floor Price/Ceiling Price

Part Number:
BC338
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/1

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 25 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.8 A
DC Collector/Base Gain hfe Min : 100 Configuration : Single
Maximum Operating Frequency : 100 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Transistor Polarity : NPN
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum Operating Frequency : 100 MHz
Maximum DC Collector Current : 0.8 A
Collector- Emitter Voltage VCEO Max : 25 V
Packaging : Bulk


Specifications

BC 337
BC 338
Collector-Emitter-voltage
B open
VCE0
45 V
25 V
Collector-Base-voltage
E open
VCB0
50 V
30 V
Emitter-Base-voltage
C open
VEB0
5 V
Power dissipation Verlustleistung
Ptot
625 mW 1)
Collector current Kollektorstrom (DC)
IC
800 mA
Junction temp. Sperrschichttemperatur
Tj
150°C
Storage temperature Lagerungstemperatur
TS
- 55.+ 150°C





Parameters:

Technical/Catalog InformationBC338
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)25V
Current - Collector (Ic) (Max)800mA
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
Frequency - Transition100MHz
Current - Collector Cutoff (Max)100nA
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BC338
BC338



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